The Nano-Optoelectronic Materials and Devices Laboratory develops high-performance nanophotonic and nanoelectronic devices for lighting and energy storage applications. Such devices are fabricated from gallium nitride (III-nitride)-based semiconductors in the form of nanostructures devised through a state-of-the-art epitaxial growth technique called molecular beam epitaxy. The direct energy bandgap of the III-nitride material system covers a wide energy range from ~ 0.65eV to 6.4eV, which encompasses nearly the entire solar spectrum. It has emerged as a powerful platform to effectively scale down the dimensions of future devices and systems. The group seeks to develop high-power laser diodes, emitting light in the green and ultraviolet spectrum regimes, using these III-nitride nanostructures. In other projects, the group aims to develop superior- quality III-nitride nanostructures wherein we will investigate the epitaxial growth, characterization and applications of III- nitride nanostructures. We believe this will provide an ideal materials system and device structure for applications in biological sensors, solid-state lighting, digital displays, electronic textiles, water purification systems, solar cells, and hydrogen generation and carbon-dioxide reduction for future clean, storable and renewable source of energy.