Keyphrases
HfO2
85%
Gate Stack
71%
Interfacial Layer
39%
Silica
37%
Gate Dielectric
29%
High-k Dielectric
27%
Dielectric
27%
MOSFET
25%
Metal Gate
23%
Annealing
23%
NMOSFET
21%
Zirconium Dioxide
21%
Interface State Density
20%
Leakage Current
19%
Charge Trapping
19%
Deuterium
18%
Antenna
18%
Breakdown Characteristics
18%
Electron Traps
17%
Gate Oxide
17%
Stress Induced Leakage Current
14%
Implanted Silicon
14%
High-k Gate Dielectrics
14%
Constant Voltage Stress
14%
Hf-silicate
14%
Flat-band Voltage
14%
Equivalent Oxide Thickness
13%
Silicon Oxynitride (SiON)
13%
Reactive Ion Etching
13%
Gate Injection
13%
Plasma Oxidation
13%
Silicon Substrate
13%
CexZr1-xO2
12%
Plasma Treatment
12%
Low-frequency Noise
12%
Si-SiO2 Interface
12%
Noise Performance
12%
Heterostructure
12%
Capacitance
11%
Activation Energy
11%
Magnetic Field Sensor
11%
Time-dependent Dielectric Breakdown
11%
Field Regions
10%
Oxides
10%
High Field
10%
N-channel
10%
MOS Capacitor
10%
Deep Level Defects
9%
Interface States
9%
Interface Passivation
9%
Engineering
Dielectrics
71%
Gate Stack
64%
Gate Dielectric
41%
Metal-Oxide-Semiconductor Field-Effect Transistor
40%
Interfacial Layer
39%
Defects
34%
Interface State
32%
Metal Gate
29%
Gate Oxide
25%
Stress Induced Leakage Current
18%
Constant Voltage
18%
Antenna
17%
Thin Films
16%
Oxide Thickness
15%
Low-Temperature
13%
Solar Cell
12%
Induced Stress
12%
Frequency Noise
12%
Silicon Substrate
12%
Metal Oxide Semiconductor
12%
Noise Performance
11%
Field Region
11%
Activation Energy
11%
Engineering
10%
Resistive Random Access Memory
10%
Deposition Process
10%
Implant
9%
Metal-Insulator-Metal
9%
Oxygen Vacancy
9%
Magnetic Field
9%
Plasma Treatment
9%
Passivation
8%
Electron Injection
8%
Deep Level
8%
Interface Trap
8%
Deep Defect
8%
Shallower
8%
Transport Mechanism
8%
Series Resistance
7%
Tunnel Construction
7%
Heterojunctions
7%
Field Effect Transistor
7%
Negative-Bias Temperature Instability
7%
Atomic Layer
7%
Room Temperature
7%
Layer Thickness
7%
Electron Trap
7%
Transients
7%
Atomic Layer Deposition
7%
Experimental Result
6%
Material Science
Dielectric Material
100%
Oxide Compound
56%
Density
46%
Silicon
35%
Capacitor
32%
Film
28%
Metal-Oxide-Semiconductor Field-Effect Transistor
27%
Zirconia
26%
Capacitance
26%
Charge Trapping
22%
Thin Films
20%
Al2O3
19%
Oxidation Reaction
18%
Oxygen Vacancy
17%
Deuterium
15%
Annealing
15%
Activation Energy
15%
Reactive Ion Etching
14%
Electrical Breakdown
14%
Nitriding
13%
Permittivity
12%
Metal Oxide
12%
Hot Carrier
11%
Electrical Property
10%
Heterojunction
10%
Oxide Semiconductor
10%
Silicate
10%
Deep-Level Transient Spectroscopy
10%
Electronic Circuit
9%
Solar Cell
9%
Resistive Random-Access Memory
9%
Carrier Transport
8%
Germanium
7%
Dielectric Property
6%
Hot Electron
6%
Dry Etching
6%
Plasma Etching
6%
Hafnium
5%
Gallium Arsenide
5%
