Engineering & Materials Science
Aluminum oxide
34%
Annealing
48%
Antennas
18%
Atomic layer deposition
18%
Capacitance
18%
Capacitance measurement
20%
Capacitors
23%
Charge trapping
38%
Data storage equipment
17%
Deep level transient spectroscopy
20%
Defects
45%
Degradation
26%
Deuterium
34%
Electric breakdown
27%
Electric potential
50%
Electrodes
19%
Electron energy levels
19%
Electron injection
17%
Electron traps
20%
Electrons
22%
FinFET
18%
Gate dielectrics
100%
Germanium
16%
Hafnium
17%
High-k dielectric
41%
Hot carriers
17%
Hot electrons
15%
Interface states
75%
Leakage currents
58%
Magnetic fields
20%
Metals
62%
MOS capacitors
29%
MOS devices
25%
Negative bias temperature instability
17%
Nitridation
28%
Oxidation
22%
Oxide semiconductors
17%
Oxides
77%
Oxygen vacancies
16%
Passivation
16%
Permittivity
17%
Plasma applications
17%
Plasmas
55%
Reactive ion etching
28%
Sensors
17%
Silicates
27%
Silicon
38%
Substrates
64%
Temperature
27%
Thin films
25%
Chemical Compounds
Ambient Reaction Temperature
5%
Annealing
18%
Application
5%
Atomic Layer Epitaxy
10%
Breakdown Voltage
7%
Capacitor
31%
Compound Mobility
9%
Conductance
10%
Deep Level Transient Spectroscopy
5%
Deep Trap
5%
Deuterium(.)
11%
Dielectric Constant
11%
Dielectric Film
5%
Dielectric Material
62%
Dielectric Property
6%
Dioxygen
6%
Drain Current
9%
Electric Field
5%
Electrical Property
7%
Electron Particle
12%
Electron Trap
10%
Energy
8%
Etching
21%
Evaporation
6%
Field Effect
16%
Figure of Merit
5%
Hafnium Atom
10%
Hysteresis
10%
Interface State
49%
Interface Trap
5%
Ion
7%
Leakage Current
54%
Liquid Film
15%
Metal
17%
Oxidation Reaction
5%
Oxide
32%
Plasma
20%
Point Group C∞V
13%
Reaction Activation Energy
8%
Reduction
6%
Semiconductor
10%
Shallow Trap
5%
Simulation
8%
Time
5%
Trap Density Measurement
16%
Tunneling
6%
Voltage
43%
Physics & Astronomy
annealing
8%
breakdown
8%
capacitance
11%
capacitors
11%
conduction
10%
damage
9%
defects
14%
deuterium
8%
dielectric properties
7%
electric potential
14%
electrical measurement
5%
electrical properties
5%
electrodes
5%
electrons
6%
energy levels
6%
etching
9%
field effect transistors
18%
implantation
5%
injection
7%
insulators
9%
inversions
5%
leakage
19%
low frequencies
12%
metal oxide semiconductors
9%
metals
13%
oxides
16%
oxygen
7%
plasma antennas
11%
plasma etching
7%
silicon
11%
slots
7%
solar cells
6%
spectroscopy
5%
temperature
10%
thin films
13%
trapping
10%
traps
20%
