Keyphrases
Activation Energy
11%
Annealing
23%
Antenna
18%
Breakdown Characteristics
18%
CexZr1-xO2
12%
Charge Trapping
19%
Constant Voltage Stress
14%
Deep Level Defects
9%
Deuterium
18%
Dielectric
26%
Electron Traps
17%
Equivalent Oxide Thickness
13%
Field Regions
10%
Flat-band Voltage
14%
Gate Dielectric
29%
Gate Injection
13%
Gate Oxide
17%
Gate Stack
71%
Heterostructure
12%
Hf-silicate
14%
HfO2
83%
High Field
10%
High-k Dielectric
27%
High-k Gate Dielectrics
14%
Implanted Silicon
14%
Interface Passivation
9%
Interface State Density
20%
Interface States
9%
Interfacial Layer
39%
Leakage Current
18%
Low-frequency Noise
12%
Magnetic Field Sensor
11%
Metal Gate
23%
MOS Capacitor
10%
MOSFET
25%
N-channel
10%
NMOSFET
21%
Noise Performance
12%
Oxides
10%
Plasma Oxidation
13%
Plasma Treatment
11%
Reactive Ion Etching
13%
Si-SiO2 Interface
12%
Silica
37%
Silicon Oxynitride (SiON)
13%
Silicon Substrate
13%
Stress Induced Leakage Current
14%
Stress-induced
9%
Time-dependent Dielectric Breakdown
11%
Zirconium Dioxide
19%
Engineering
Activation Energy
11%
Antenna
17%
Atomic Layer
7%
Atomic Layer Deposition
7%
Constant Voltage
18%
Deep Defect
8%
Deep Level
8%
Defects
34%
Deposition Process
10%
Dielectrics
71%
Electron Injection
8%
Electron Trap
7%
Engineering
7%
Experimental Result
6%
Field Effect Transistor
7%
Field Region
11%
Frequency Noise
12%
Gate Dielectric
41%
Gate Oxide
25%
Gate Stack
64%
Heterojunctions
7%
Implant
9%
Induced Stress
12%
Interface State
32%
Interface Trap
8%
Interfacial Layer
39%
Layer Thickness
7%
Low-Temperature
13%
Magnetic Field
9%
Metal Gate
29%
Metal Oxide Semiconductor
12%
Metal-Insulator-Metal
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
40%
Negative-Bias Temperature Instability
7%
Noise Performance
11%
Oxide Thickness
15%
Oxygen Vacancy
7%
Passivation
8%
Plasma Treatment
7%
Resistive Random Access Memory
7%
Room Temperature
7%
Series Resistance
7%
Shallower
8%
Silicon Substrate
12%
Solar Cell
12%
Stress Induced Leakage Current
18%
Thin Films
16%
Transients
7%
Transport Mechanism
8%
Tunnel Construction
7%
Material Science
Activation Energy
15%
Al2O3
19%
Annealing
15%
Capacitance
22%
Capacitor
32%
Carrier Transport
8%
Charge Trapping
22%
Deep-Level Transient Spectroscopy
10%
Density
46%
Deuterium
15%
Dielectric Material
100%
Dielectric Property
6%
Dry Etching
6%
Electrical Breakdown
14%
Electrical Property
10%
Electronic Circuit
9%
Film
28%
Gallium Arsenide
5%
Germanium
7%
Hafnium
5%
Heterojunction
10%
Hot Carrier
11%
Hot Electron
6%
Metal Oxide
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
27%
Nitriding
13%
Oxidation Reaction
18%
Oxide Compound
56%
Oxide Semiconductor
10%
Oxygen Vacancy
15%
Permittivity
11%
Plasma Etching
6%
Reactive Ion Etching
14%
Resistive Random-Access Memory
7%
Silicate
10%
Silicon
35%
Solar Cell
9%
Thin Films
20%
Zirconia
24%
