Calculated based on number of publications stored in Pure and citations from Scopus
20092024

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  • 2022

    III-Nitride HEMTs for THz Applications

    Rao, G. P., Lenka, T. R., Choudhury, M. & Nguyen, H. P. T., Jan 1 2022, Terahertz Devices, Circuits and Systems: Materials, Methods and Applications. Springer Nature, p. 149-166 18 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    2 Scopus citations
  • 2021

    Ga2O3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications

    Singh, R., Lenka, T. R., Panda, D., Velpula, R. T., Jain, B., Bui, H. Q. T. & Nguyen, H. P. T., Jan 1 2021, Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing. Springer Singapore, p. 209-227 19 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

  • 2020

    RF performance of ultra-wide bandgap HEMTs

    Singh, R., Lenka, T. R., Panda, D., Velpula, R. T., Jain, B., Bui, H. Q. T. & Nguyen, H. P. T., Jan 1 2020, Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-matter Interactions. Springer Singapore, p. 49-63 15 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

  • 2014

    Axial GaN Nanowire-Based LEDs

    Wang, Q., N'Guyen, H., Zhao, S. & Mi, Z., Sep 15 2014, Wide Band Gap Semiconductor Nanowires 2: Heterostructures and Optoelectronic Devices. Wiley-Blackwell, Vol. 9781848216877. p. 105-134 30 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter