Calculated based on number of publications stored in Pure and citations from Scopus
1992 …2022

Research activity per year

Network

P. M. Fauchet

  • Syracuse University
  • University of Rochester
  • Belarusian State University of Informatics and Radioelectronics
  • Institute of Optics
  • National Research Council of Canada
  • CNRS
  • Institute of Optics
  • Dept. of Elec. and Comp. Engineering
  • Department of Electrical Engineering
  • Nanoscale Silicon Research Initiative
  • Department of Physics and Astronomy
  • Laboratory for Laser Energetics
  • Materials Science Program
  • Department of Physics and Astronomy
  • Department of Electrical
  • Institute for Microstructural Sciences
  • Department of Electrical Engineering
  • Laboratoire de Spectroḿetrie Physique
  • also at the Laboratory for Laser Energetics
  • Laboratory for Laser Energetics
  • Laboratory for Laser Energetics
  • Laboratory for Laser Energetics
  • Université Grenoble Alpes
  • CNRS and Université Grenoble I
  • University of Rochester
  • Laboratory for Laser Energetics

External person

D. J. Lockwood

  • National Research Council of Canada
  • Stanford University
  • University of Rochester
  • Institute for Microstructural Sciences
  • Institute for Microstructural Sciences
  • Nanoscale Silicon Research Initiative
  • Department of Electrical Engineering
  • Information Systems Laboratory
  • Department of Electrical
  • Institute of Microstructural Sciences
  • Stanford University
  • University of Rochester

External person

J. M. Baribeau

  • National Research Council of Canada
  • University of Rochester
  • Institute for Microstructural Sciences
  • Institute for Microstructural Sciences
  • Institute of Microstructural Sciences

External person

B. V. Kamenev

  • New Jersey Institute of Technology
  • Nanometrics Inc.
  • Rudolph Technologies Inc.
  • Department of Electrical and Computer Engineering
  • Department of Electrical Engineering
  • Nanometrics Incorporated
  • Rudolph Technologies, Inc.

External person

K. D. Hirschman

  • University of Rochester
  • Rochester Institute of Technology
  • National Research Council of Canada
  • Department of Electrical Engineering
  • Dept. of Microelectronic Engineering
  • Laboratory for Laser Energetics
  • Nanoscale Silicon Research Initiative
  • Department of Electrical
  • Institute for Microstructural Sciences
  • Dept. of Elec. and Comp. Engineering
  • University of Rochester
  • Kate Gleason College of Engineering

External person

S. P. Duttagupta

  • University of Rochester
  • Boise State University
  • Department of Electrical Engineering
  • Laboratory for Laser Energetics
  • Department of Electrical Engineering
  • University of Rochester

External person

G. F. Grom

  • University of Rochester
  • Materials Science Program
  • Motorola
  • Materials Science Program
  • Agere Systems
  • National Research Council of Canada
  • Nanoscale Silicon Research Initiative
  • Dept. of Elec. and Comp. Engineering
  • Institute for Microstructural Sciences
  • Proc. and Mat. Characterization Lab.
  • Materials Science Program
  • Department of Mechanical Engineering
  • Department of Electrical
  • Department of Mechanical Engineering
  • University of Rochester

External person

T. I. Kamins

  • Hewlett-Packard
  • Stanford University
  • Quantum Science Research
  • Information Systems Laboratory
  • Information and Quantum Systems Laboratory
  • Stanford University

External person

Xiaohua Wu

  • National Research Council of Canada
  • Institute for Microstructural Sciences

External person

J. P. McCaffrey

  • National Research Council of Canada
  • University of Rochester
  • Institute for Microstructural Sciences
  • Nanoscale Silicon Research Initiative
  • Institute for Microstructural Sciences

External person

C. Peng

  • University of Rochester
  • Laboratory for Laser Energetics
  • Department of Electrical Engineering
  • University of Rochester

External person

Selina Mala

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

Eun Kyu Lee

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

X. Wu

  • National Research Council of Canada

External person

R. Krishnan

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • Dept. of Elec. and Comp. Engineering
  • University of Rochester

External person

Han Yun Chang

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

M. Zacharias

  • University of Rochester
  • Otto von Guericke University Magdeburg
  • Max Planck Institute of Microstructure Physics
  • Department of Electrical Engineering
  • Institute of Experimental Physics
  • Institute of Experimental Physics
  • University of Rochester

External person

Xiaolu Wang

  • Department of Electrical and Computer Engineering
  • New Jersey Institute of Technology

External person

N. Modi

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

E. Ettedgui

  • University of Rochester
  • Laboratory for Laser Energetics

External person

Ju V. Vandyshev

  • University of Rochester
  • Department of Electrical Engineering
  • Laboratory for Laser Energetics
  • University of Rochester

External person

G. I. Sproule

  • National Research Council of Canada
  • University of Rochester
  • Institute for Microstructural Sciences
  • Nanoscale Silicon Research Initiative
  • Department of Electrical Engineering
  • Institute for Microstructural Sciences
  • University of Rochester

External person

V. Timoshenko

  • Tech. Univ. of München
  • Technical University of Munich
  • Physics Department
  • Lomonosov Moscow State University
  • Physics Department E16
  • Tech. Universität München
  • M. V. Lomonosov Moscow Stt. Univ.
  • Moscow Stt. M.V. Lomonosov Univ.
  • Tech. Univ. of München
  • Ludwig Maximilian University of Munich

External person

L. Montes

  • University of Rochester
  • CNRS
  • National Research Council of Canada
  • Nanoscale Silicon Research Initiative
  • Institute for Microstructural Sciences
  • Dept. of Elec. and Comp. Engineering
  • Laboratoire de Spectroḿetrie Physique
  • Université Grenoble Alpes
  • CNRS and Université Grenoble I
  • University of Rochester

External person

Y. Gao

  • University of Rochester
  • Nokia

External person

B. White

  • Motorola
  • Digital DNA Laboratories
  • University of Rochester

External person

J. von Behren

  • University of Rochester
  • Technical University of Munich
  • Physics Department
  • Department of Electrical Engineering
  • Laboratory for Laser Energetics
  • University of Rochester

External person

K. Moore

  • University of Rochester

External person

H. J. Labbé

  • National Research Council of Canada
  • University of Rochester
  • Institute for Microstructural Sciences
  • Nanoscale Silicon Research Initiative

External person

D. Hall

  • University of Rochester

External person

J. M. Rehm

  • University of Rochester
  • Department of Chemistry
  • Department of Chemistry

External person

G. L. McLendon

  • University of Rochester
  • Department of Chemistry
  • Department of Chemistry

External person

D. Kovalev

  • Technical University of Munich
  • Tech. Univ. of München
  • Physics Department E16
  • Tech. Univ. of München
  • Ludwig Maximilian University of Munich

External person

G. E. Carver

  • University of Rochester
  • Lucent
  • Nokia

External person

S. Chan

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

V. P. Bondarenko

  • Belarusian State University
  • University of Rochester
  • Belarusian State University of Informatics and Radioelectronics

External person

Christopher C. Striemer

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

S. K. Kurinec

  • University of Rochester
  • Rochester Institute of Technology
  • Dept. of Microelectronic Engineering
  • Kate Gleason College of Engineering

External person

F. Koch

  • Technical University of Munich
  • Tech. Univ. of München
  • Physics Department E16
  • Tech. Univ. of München
  • Ludwig Maximilian University of Munich

External person

J. Bläsing

  • Otto von Guericke University Magdeburg
  • Institute of Experimental Physics
  • Institute of Experimental Physics

External person

V. Sharma

  • New Jersey Institute of Technology

External person

Hideki Koyama

  • University of Rochester
  • Dept. of Elec. and Comp. Engineering
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

J. Diener

  • Technical University of Munich
  • Tech. Univ. of München
  • Physics Department E16
  • Tech. Univ. of München
  • Ludwig Maximilian University of Munich

External person

F. Seiferth

  • University of Rochester
  • Rochester Institute of Technology
  • Dept. of Microelectronic Engineering
  • Kate Gleason College of Engineering

External person

H. A. Lopez

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • Materials Science Program
  • University of Rochester

External person

C. Delerue

  • Departement Inst. Superieur E.
  • Inst. d'Electron. Microelectronique

External person

Qianghua Xie

  • Motorola
  • Semiconductor Product Sector
  • Proc. and Mat. Characterization Lab.

External person

E. A. Schiff

  • Syracuse University
  • University of Rochester
  • Department of Physics

External person

S. Papernov

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • Laboratory for Laser Energetics
  • University of Rochester

External person

N. Kazuchits

  • University of Rochester
  • Belarusian State University
  • Belarusian State University of Informatics and Radioelectronics

External person

A. M. Bratkovsky

  • Russian Academy of Sciences

External person

T. N. Blanton

  • Eastman Kodak
  • University of Rochester

External person

A. Raisanen

  • University of Rochester
  • Xerox

External person

P. Veit

  • Otto von Guericke University Magdeburg
  • Institute of Experimental Physics

External person

P. A. Forsh

  • Lomonosov Moscow State University
  • M. V. Lomonosov Moscow Stt. Univ.
  • Moscow Stt. M.V. Lomonosov Univ.

External person

A. Dubois

  • University of Rochester
  • Department of Electrical Engineering
  • Laboratory for Laser Energetics
  • University of Rochester

External person

V. A. Yakovtseva

  • Belarusian State University of Informatics and Radioelectronics
  • Belarusian State University
  • University of Rochester

External person

S. Sharma

  • Hewlett-Packard
  • Quantum Science Research
  • Information and Quantum Systems Laboratory

External person

B. Laikhtman

  • Hebrew University of Jerusalem
  • Racah Institute of Physics

External person

P. K. Kashkarov

  • Lomonosov Moscow State University
  • Moscow Stt. M.V. Lomonosov Univ.
  • M. V. Lomonosov Moscow Stt. Univ.

External person

Prasanna Rao

  • Syracuse University
  • Department of Physics

External person

Irina N. Yassievich

  • RAS - Ioffe Physico Technical Institute

External person

S. S. Chang

  • University of Florida
  • Department of Materials Science and Engineering
  • University of Florida

External person

Shihab Bin Hafiz

  • Department of Electrical and Computer Engineering
  • New Jersey Institute of Technology

External person

L. F. Moore

  • University of Rochester

External person

M. H. Ludwig

  • University of Florida
  • Department of Materials Science and Engineering
  • University of Florida

External person

A. W. Schmid

  • University of Rochester
  • Laboratory for Laser Energetics

External person

Q. Gu

  • University of Rochester

External person

Stefan Zollner

  • Motorola
  • Proc. and Mat. Characterization Lab.

External person

O. A. Shalygina

  • Lomonosov Moscow State University
  • Moscow Stt. M.V. Lomonosov Univ.

External person

N. M. Kalkhoran

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

Y. Kostoulas

  • University of Rochester
  • Laboratory for Laser Energetics

External person

H. A. Mizes

  • University of Rochester

External person

K. B. Ucer

  • University of Rochester

External person

Y. M. Niquet

  • Departement Inst. Superieur E.
  • Inst. d'Electron. Microelectronique

External person

H. Han

  • New Jersey Institute of Technology
  • City University of New York

External person

L. J. Brillson

  • University of Rochester

External person

Jifeng Liu

  • Dartmouth College

External person

P. Kohlert

  • Otto von Guericke University Magdeburg
  • Institute of Experimental Physics

External person

M. Alam

  • New Jersey Institute of Technology

External person

V. Duzhko

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

J. Rappich

  • Helmholtz Centre Berlin for Materials and Energy
  • Hahn-Meitner-Institute

External person

Th Dittrich

  • Technical University of Munich
  • Tech. Universität München

External person

M. Jungo

  • University of Rochester
  • Department of Electrical Engineering
  • University of Rochester

External person

J. P. McCafrey

  • National Research Council of Canada
  • Institute for Microstructural Sciences

External person

R. Stanley Williams

  • Hewlett-Packard
  • Quantum Science Research

External person

Himansu Yapa

  • Motorola
  • Proc. and Mat. Characterization Lab.

External person

Aleksei Anopchenko

  • University of Trento

External person

Maciek Wojdak

  • University College London

External person

H. Han

  • New Jersey Institute of Technology
  • Department of Electrical and Computer Engineering

External person

N. N. Vorozov

  • Belarusian State University
  • University of Rochester
  • Belarusian State University of Informatics and Radioelectronics

External person

L. Depaulis

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

Tom Gregorkiewicz

  • University of Amsterdam

External person

E. A. Lebedev

  • RAS - Ioffe Physico Technical Institute

External person

G. Allan

  • Departement Inst. Superieur E.
  • Inst. d'Electron. Microelectronique

External person

Stefano Ossicini

  • University of Modena and Reggio Emilia

External person

J. Chen

  • New Jersey Institute of Technology
  • City University of New York

External person

M. W Chandre Dharma-Wardana

  • National Research Council of Canada
  • Institute of Microstructural Sciences

External person

K. Pangal

  • CNRS
  • Laboratoire de Spectroḿetrie Physique
  • Université Grenoble Alpes
  • CNRS and Université Grenoble I

External person

Saba Saeed

  • University of Amsterdam

External person

P. D J Calcott

  • University of Rochester

External person

Y. Diamant

  • City University of New York
  • Electrical Engineering Department
  • New Jersey Institute of Technology
  • Electronic Imaging Center

External person

Alexei Prokofiev

  • RAS - Ioffe Physico Technical Institute

External person

Al Meldrum

  • University of Alberta

External person

Victoria A. Neeley

  • Motorola
  • Proc. and Mat. Characterization Lab.

External person

Patricia F. Dryer

  • Motorola
  • Proc. and Mat. Characterization Lab.

External person

L. Dolgyi

  • University of Rochester

External person

S. Volchek

  • University of Rochester

External person

Yu V. Ryabchikov

  • Lomonosov Moscow State University
  • M. V. Lomonosov Moscow Stt. Univ.

External person

V. Petrovich

  • Belarusian State University of Informatics and Radioelectronics

External person

M. G. Lisachenko

  • Lomonosov Moscow State University
  • Moscow Stt. M.V. Lomonosov Univ.

External person

H. B. Kim

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

J. Heitmann

  • Max Planck Institute of Microstructure Physics

External person

R. E. Hummel

  • Kyoto University
  • University of Florida
  • Department of Materials Science and Engineering
  • University of Florida

External person

L. McLoud

  • University of Rochester
  • Department of Electrical Engineering
  • University of Rochester

External person

F. Foucher

  • Belarusian State University
  • University of Rochester
  • Belarusian State University of Informatics and Radioelectronics

External person

Ran Liu

  • Motorola

External person

L. N. Dolgiǐ

  • Belarusian State University
  • University of Rochester
  • Belarusian State University of Informatics and Radioelectronics

External person

Q. Zhu

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • University of Rochester

External person

J. C. Sturm

  • CNRS
  • Laboratoire de Spectroḿetrie Physique
  • Université Grenoble Alpes
  • CNRS and Université Grenoble I

External person

H. Heckler

  • Technical University of Munich
  • Physics Department E16

External person

Qingyuan Zhu

  • University of Rochester
  • Nanoscale Silicon Research Initiative
  • Dept. of Elec. and Comp. Engineering
  • University of Rochester

External person