Synthesis and Characterization of Boron Nitride Masks for X-Ray Lithography

The electrical, optical, and mechanical properties of the boron nitride and silicon carbide films will be investigated prior to and after x-ray synchrotron radiation. The electrical measurement will be conducted on capacitor structures consisting of highly doped (0.0025 -cm) p-type silicon substrates with overlying films of aluminum to serve as the base electrode, the boron nitride dielectric, and aluminum dots evaporated through a metal shadow mask. Only compositions deemed suitable for x-ray membranes will undergo such tests. The dependence of current density on electric field will be examined to determine the prevalent conduction mechanism in the material as well as the influence of radiation dose on the potential change in the electrical behavior.