γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures

P. Saeta, J. F. Federici, R. J. Fischer, B. I. Greene, L. Pfeiffer, R. C. Spitzer, B. A. Wilson

Research output: Contribution to journalArticlepeer-review

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Abstract

We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.

Original languageEnglish (US)
Pages (from-to)1681-1683
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
StatePublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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