Abstract
We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1681-1683 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 54 |
| Issue number | 17 |
| DOIs | |
| State | Published - 1989 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)