γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures

  • P. Saeta
  • , J. F. Federici
  • , R. J. Fischer
  • , B. I. Greene
  • , L. Pfeiffer
  • , R. C. Spitzer
  • , B. A. Wilson

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.

Original languageEnglish (US)
Pages (from-to)1681-1683
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
StatePublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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