1/f noise as a tool to assess Fermi level pinning (EF) at the HfO2/ poly-Si and FUSI interface in high-κ n-MOSFETs

P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Evidence is provided that 1/f noise may be useful in the analysis of the traps responsible for Fermi level pinning at the HfO2/poly-Si or HfO2/FUSI interface in high-κ n-MOSFETs. As reference devices, transistors with 1.5 nm SiON gate dielectric have been used. It is shown that adding a few (5, 10, 20) monolayers of HfO2 enhances markedly the normalized noise magnitude in both poly-Si and FUSI devices. The 1/f noise characteristic behaves according to the number fluctuations theory and the results are interpreted in terms of trapping and de-trapping of channel carriers by defects in the gate dielectric layer. Differences in trap densities, derived from the low-frequency noise spectra are noticed at the gate/dielectric interface, which can explain the Fermi-level pinning in these devices. Additionally, it is shown that the correlated mobility fluctuations derived from the 1/f noise at larger gate voltage overdrives correlate well with the low-field mobility of the n-MOSFETs, demonstrating that the same traps in the gate dielectric are also partly responsible for the mobility degradation. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationSilicon Materials Science and Technology X
Pages503-513
Number of pages11
Edition2
StatePublished - Jul 3 2006
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Publication series

NameECS Transactions
Number2
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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