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1/f noise as a tool to assess Fermi level pinning (EF) at the HfO2/ poly-Si and FUSI interface in high-κ n-MOSFETs
P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, Durgamadhab Misra
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
3
Scopus
citations