1/f noise as a tool to assess Fermi level pinning (EF) at the HfO2/ poly-Si and FUSI interface in high-κ n-MOSFETs

P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

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Engineering & Materials Science