1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

P. Srinivasan, E. Simoen, B. De Jaeger, C. Claeys, D. Misra

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21 Scopus citations


The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/fγ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm-1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN-TaN MOSFETs.

Original languageEnglish (US)
Pages (from-to)721-726
Number of pages6
JournalMaterials Science in Semiconductor Processing
Issue number4-5 SPEC. ISS.
StatePublished - Aug 2006

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Germanium
  • HfO
  • Interface traps
  • Low-frequency noise
  • Metal gate
  • Number fluctuations
  • Tunneling coefficient


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