1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

P. Srinivasan; E. Simoen; B. De Jaeger; C. Claeys; D. Misra

doi:10.1016/j.mssp.2006.08.018

1/f noise performance of MOSFETs with HfO₂ and metal gate on Ge-on-insulator substrates

P. Srinivasan, E. Simoen, B. De Jaeger, C. Claeys, D. Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO₂ and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/f^γ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×10⁷ cm^-1 for the Ge/HfO₂ system, the extracted volume and surface trap densities are in the range of 1×10²⁰/cm³ eV and a few 10¹²/cm²_, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO₂/ TiN-TaN MOSFETs.

Original language	English (US)
Pages (from-to)	721-726
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	4-5 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2006.08.018
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Germanium
HfO
Interface traps
Low-frequency noise
Metal gate
Number fluctuations
Tunneling coefficient

Access to Document

10.1016/j.mssp.2006.08.018

Cite this

@article{34f5a8a1fceb4e8293c159975df55ab6,

title = "1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates",

abstract = "The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/fγ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm-1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN-TaN MOSFETs.",

keywords = "Germanium, HfO, Interface traps, Low-frequency noise, Metal gate, Number fluctuations, Tunneling coefficient",

author = "P. Srinivasan and E. Simoen and {De Jaeger}, B. and C. Claeys and D. Misra",

note = "Funding Information: P. Srinivasan wishes to acknowledge NSF (Award ♯ECS-0140584) for his financial support. The authors also thank the IMEC high- k and Ge-processing teams for supplying the material and helpful discussions. ",

year = "2006",

month = aug,

doi = "10.1016/j.mssp.2006.08.018",

language = "English (US)",

volume = "9",

pages = "721--726",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "4-5 SPEC. ISS.",

}

TY - JOUR

T1 - 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

AU - Srinivasan, P.

AU - Simoen, E.

AU - De Jaeger, B.

AU - Claeys, C.

AU - Misra, D.

N1 - Funding Information: P. Srinivasan wishes to acknowledge NSF (Award ♯ECS-0140584) for his financial support. The authors also thank the IMEC high- k and Ge-processing teams for supplying the material and helpful discussions.

PY - 2006/8

Y1 - 2006/8

N2 - The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/fγ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm-1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN-TaN MOSFETs.

AB - The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/fγ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm-1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN-TaN MOSFETs.

KW - Germanium

KW - HfO

KW - Interface traps

KW - Low-frequency noise

KW - Metal gate

KW - Number fluctuations

KW - Tunneling coefficient

UR - http://www.scopus.com/inward/record.url?scp=33845218048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845218048&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2006.08.018

DO - 10.1016/j.mssp.2006.08.018

M3 - Article

AN - SCOPUS:33845218048

SN - 1369-8001

VL - 9

SP - 721

EP - 726

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4-5 SPEC. ISS.

ER -