Keyphrases
HfO2
100%
MOSFET
100%
Metal Gate
100%
Noise Performance
100%
Insulator Substrate
100%
Germanium-on-insulator (GeOI)
100%
Trap Density
50%
Carrier Trapping
25%
Noise Generation Mechanism
25%
Tunneling
25%
Noise Characteristics
25%
Interface Traps
25%
Noise Spectrum
25%
NMOSFET
25%
Low-frequency (LF) Noise
25%
PMOSFET
25%
Interfacial Layer
25%
Noise Spectral Density
25%
Surface Traps
25%
Charge Pump
25%
Current Noise
25%
Engineering
Metal Gate
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Noise Performance
100%
Tunnel Construction
33%
Interface Trap
33%
Noise Spectra
33%
Interfacial Layer
33%
Spectral Noise
33%
Characteristic Point
33%