200 mm SCALPEL mask development

G. R. Bogart, A. E. Novembre, A. Kornblit, M. L. Peabody, R. C. Farrow, M. I. Blakey, R. J. Kasica, J. A. Liddle, T. Saunders, C. S. Knurek, I. Johnston

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

SCattering with Angular Limitation Projection Electron beam Lithography (SCALPEL) is a true 4X reduction technology that capitalizes on high resolution capabilities (50 nm) from electron beam exposure and high throughput capabilities (approximately 30 wafers/hour) from projection printing. Current mask blank fabrication for SCALPEL technology uses widely available 100 mm, [100] crystalline silicon wafers. The use of 100 mm crystalline [100] wafers and a wet, through wafer etch process causes the patterned strut width to increase as the wafer is etched and must be accounted for in the mask blank fabrication process. In the wet etch process, a 100 μm wide strut grows to 800 μm at the strut-membrane interface. As a consequence, the maximum printable die size due to the wafer size and the decreased amount of open area between each strut is 8×8 mm. Additionally, crystal defects in the silicon wafer affect the wet etch process and contribute to mask blank failures. A partial solution for an increased die size is to increase the wafer size used to make the SCALPEL mask blank. A 200 mm wafer is capable of producing larger die sizes. This can be further improved by dry etching of the grill structure to form struts with vertical sidewalls. As a result, die sizes of 25×25 mm or 16×32.5 mm can be produced depending on the grill pattern used. However, use of large wafers and dry etching for mask blank formation has significant issues that must be addressed. Among the issues to be addressed are etch chemistries, etch mask materials, and wafer handling.

Original languageEnglish (US)
Pages (from-to)171-177
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3676
Issue numberI
DOIs
StatePublished - 1999
EventProceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA
Duration: Mar 15 1999Mar 17 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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