TY - JOUR
T1 - 2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics
AU - Lenka, Trupti Ranjan
AU - Singh, Rajan
AU - Tripathy, Susanta Kumar
AU - Goyal, Vishal
AU - Nguyen, Truong Khang
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2021 John Wiley & Sons Ltd.
PY - 2022/1/1
Y1 - 2022/1/1
N2 - In this paper the 2DEG characteristics study of InAlAs/InP based high electron mobility transistor (HEMT) structures with two different channel materials (InAlAs and InGaAs) are presented through self-consistent solutions of Schrodinger and Poisson equations which results in energy bands, sheet charge density, electric field, sheet resistance and CV charactristics. The 2DEG (two dimensional electron gas) is created at the heterointerface of InAlAs/In(Al,Ga)As due to conduction energy band discontinuity. The 2DEG is realised by the presence of subbands at the quantum well. The subbands represent the wave function of electrons. The innovation of this work is that InAlAs and InGaAs with x = 0.75 composition can be best utilised as channel material due to low bandgaps 0.821 and 0.639 eV respectively towards improved 2DEG density, subbands, channel sheet resistance, electric field in the 2DEG and CV characteristics. The DC characteristics comprised of Id ~ Vg, Id ~ Vd, transconductance, cut-off frequency, maximum frequency of oscillation are extracted through TCAD simulations followed by experimental validation. The InGaAs/InP based HEMT can be a potential candidate for ultra-high-speed microwave and millimetre wave applications.
AB - In this paper the 2DEG characteristics study of InAlAs/InP based high electron mobility transistor (HEMT) structures with two different channel materials (InAlAs and InGaAs) are presented through self-consistent solutions of Schrodinger and Poisson equations which results in energy bands, sheet charge density, electric field, sheet resistance and CV charactristics. The 2DEG (two dimensional electron gas) is created at the heterointerface of InAlAs/In(Al,Ga)As due to conduction energy band discontinuity. The 2DEG is realised by the presence of subbands at the quantum well. The subbands represent the wave function of electrons. The innovation of this work is that InAlAs and InGaAs with x = 0.75 composition can be best utilised as channel material due to low bandgaps 0.821 and 0.639 eV respectively towards improved 2DEG density, subbands, channel sheet resistance, electric field in the 2DEG and CV characteristics. The DC characteristics comprised of Id ~ Vg, Id ~ Vd, transconductance, cut-off frequency, maximum frequency of oscillation are extracted through TCAD simulations followed by experimental validation. The InGaAs/InP based HEMT can be a potential candidate for ultra-high-speed microwave and millimetre wave applications.
KW - 2DEG
KW - HEMT
KW - Poisson
KW - Schrodinger
KW - heterostructure
KW - quantum well
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U2 - 10.1002/jnm.2941
DO - 10.1002/jnm.2941
M3 - Article
AN - SCOPUS:85112080576
SN - 0894-3370
VL - 35
JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
IS - 1
M1 - e2941
ER -