2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

Trupti Ranjan Lenka, Rajan Singh, Susanta Kumar Tripathy, Vishal Goyal, Truong Khang Nguyen, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

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Mathematics

Engineering & Materials Science