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2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics
Trupti Ranjan Lenka, Rajan Singh, Susanta Kumar Tripathy, Vishal Goyal, Truong Khang Nguyen, Hieu Pham Trung Nguyen
Research output: Contribution to journal › Article › peer-review