A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States

S. R. Nandakumar, Marie Minvielle, Saurabh Nagar, Catherine Dubourdieu, Bipin Rajendran

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e2/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications.

Original languageEnglish (US)
Pages (from-to)1602-1608
Number of pages7
JournalNano Letters
Volume16
Issue number3
DOIs
StatePublished - Mar 9 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Cu
  • Memristor
  • SiO
  • filamentary conduction
  • half-integer quantization
  • nanoelectronics
  • resistive switching

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