A compact CMOS 3-D magnetic field sensor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages543-556
Number of pages14
Edition3
DOIs
StatePublished - Nov 19 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: May 6 2012May 10 2012

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period5/6/125/10/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'A compact CMOS 3-D magnetic field sensor'. Together they form a unique fingerprint.

Cite this