A compact CMOS 3-D magnetic field sensor

G. Wang; D. Misra

doi:10.1149/1.3700919

A compact CMOS 3-D magnetic field sensor

G. Wang, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal.

Original language	English (US)
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	543-556
Number of pages	14
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700919
State	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: May 6 2012 → May 10 2012

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	5/6/12 → 5/10/12

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/1.3700919

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Wang, G., & Misra, D. (2012). A compact CMOS 3-D magnetic field sensor. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 543-556). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700919

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title = "A compact CMOS 3-D magnetic field sensor",

abstract = "This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal.",

author = "G. Wang and D. Misra",

year = "2012",

doi = "10.1149/1.3700919",

language = "English (US)",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "543--556",

booktitle = "Dielectrics for Nanosystems 5",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

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Wang, G & Misra, D 2012, A compact CMOS 3-D magnetic field sensor. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 543-556, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 5/6/12. https://doi.org/10.1149/1.3700919

A compact CMOS 3-D magnetic field sensor. / Wang, G.; Misra, D.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 543-556 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal.

AB - This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal.

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A compact CMOS 3-D magnetic field sensor

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