A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

R. A. Levy, L. Chen, J. M. Grow, Y. Yu

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The environmentally benign precursor diethylsilane (DES) was used with either N2O or NH3 to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N2O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions.

Original languageEnglish (US)
Pages (from-to)102-107
Number of pages6
JournalMaterials Letters
Volume54
Issue number2-3
DOIs
StatePublished - May 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Diethylsilane

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