A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

R. A. Levy; L. Chen; J. M. Grow; Y. Yu

doi:10.1016/S0167-577X(01)00545-6

A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

R. A. Levy, L. Chen, J. M. Grow, Y. Yu

Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The environmentally benign precursor diethylsilane (DES) was used with either N₂O or NH₃ to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N₂O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions.

Original language	English (US)
Pages (from-to)	102-107
Number of pages	6
Journal	Materials Letters
Volume	54
Issue number	2-3
DOIs	https://doi.org/10.1016/S0167-577X(01)00545-6
State	Published - May 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Diethylsilane

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10.1016/S0167-577X(01)00545-6

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title = "A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane",

abstract = "The environmentally benign precursor diethylsilane (DES) was used with either N2O or NH3 to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N2O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions.",

keywords = "Diethylsilane",

author = "Levy, {R. A.} and L. Chen and Grow, {J. M.} and Y. Yu",

note = "Funding Information: The authors wish to thank A. Lagendijk at Schumacher for providing the DES precursor and for his continued guidance and support. Thanks are also due to Richard Shalvoy for the XPS analyses of the deposits. Funding for this work was provided by grants from the Emission Reduction Research Center at NJIT and the ATC-SEM/AIMS.",

year = "2002",

month = may,

doi = "10.1016/S0167-577X(01)00545-6",

language = "English (US)",

volume = "54",

pages = "102--107",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "2-3",

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T1 - A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

AU - Levy, R. A.

AU - Chen, L.

AU - Grow, J. M.

AU - Yu, Y.

N1 - Funding Information: The authors wish to thank A. Lagendijk at Schumacher for providing the DES precursor and for his continued guidance and support. Thanks are also due to Richard Shalvoy for the XPS analyses of the deposits. Funding for this work was provided by grants from the Emission Reduction Research Center at NJIT and the ATC-SEM/AIMS.

PY - 2002/5

Y1 - 2002/5

N2 - The environmentally benign precursor diethylsilane (DES) was used with either N2O or NH3 to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N2O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions.

AB - The environmentally benign precursor diethylsilane (DES) was used with either N2O or NH3 to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N2O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions.

KW - Diethylsilane

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DO - 10.1016/S0167-577X(01)00545-6

M3 - Article

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SN - 0167-577X

VL - 54

SP - 102

EP - 107

JO - Materials Letters

JF - Materials Letters

IS - 2-3

ER -

A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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