A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation

Bhushan Sopori; Srinivas Devayajanam; Prakash Basnyat; Vishal Mehta; Helio Moutinho; Bill Nemeth; Vincenzo Lasalvia; Steve Johnston; N. M. Ravindra; Jeff Binns; Jesse Appel

doi:10.1557/opl.2014.591

A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation

Bhushan Sopori
, Srinivas Devayajanam
, Prakash Basnyat
, Vishal Mehta
, Helio Moutinho
, Bill Nemeth
, Vincenzo Lasalvia
, Steve Johnston
, N. M. Ravindra
, Jeff Binns
, Jesse Appel

Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

Original language	English (US)
Journal	Materials Research Society Symposium Proceedings
Volume	1670
DOIs	https://doi.org/10.1557/opl.2014.591
State	Published - 2014
Event	2014 MRS Spring Meeting - San Francisco, United States Duration: Apr 21 2014 → Apr 25 2014

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Si
oxide
passivation

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10.1557/opl.2014.591

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Sopori, B., Devayajanam, S., Basnyat, P., Mehta, V., Moutinho, H., Nemeth, B., Lasalvia, V., Johnston, S., Ravindra, N. M., Binns, J., & Appel, J. (2014). A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation. Materials Research Society Symposium Proceedings, 1670. https://doi.org/10.1557/opl.2014.591

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title = "A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation",

abstract = "We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.",

keywords = "Si, oxide, passivation",

author = "Bhushan Sopori and Srinivas Devayajanam and Prakash Basnyat and Vishal Mehta and Helio Moutinho and Bill Nemeth and Vincenzo Lasalvia and Steve Johnston and Ravindra, \{N. M.\} and Jeff Binns and Jesse Appel",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 Materials Research Society.; 2014 MRS Spring Meeting ; Conference date: 21-04-2014 Through 25-04-2014",

year = "2014",

doi = "10.1557/opl.2014.591",

language = "English (US)",

volume = "1670",

journal = "Materials Research Society Symposium Proceedings",

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publisher = "Materials Research Society",

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Sopori, B, Devayajanam, S, Basnyat, P, Mehta, V, Moutinho, H, Nemeth, B, Lasalvia, V, Johnston, S, Ravindra, NM, Binns, J & Appel, J 2014, 'A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation', Materials Research Society Symposium Proceedings, vol. 1670. https://doi.org/10.1557/opl.2014.591

TY - JOUR

T1 - A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers

T2 - 2014 MRS Spring Meeting

AU - Sopori, Bhushan

AU - Devayajanam, Srinivas

AU - Basnyat, Prakash

AU - Mehta, Vishal

AU - Moutinho, Helio

AU - Nemeth, Bill

AU - Lasalvia, Vincenzo

AU - Johnston, Steve

AU - Ravindra, N. M.

AU - Binns, Jeff

AU - Appel, Jesse

PY - 2014

Y1 - 2014

N2 - We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

AB - We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

KW - Si

KW - oxide

KW - passivation

UR - https://www.scopus.com/pages/publications/84924388426

UR - https://www.scopus.com/pages/publications/84924388426#tab=citedBy

U2 - 10.1557/opl.2014.591

DO - 10.1557/opl.2014.591

M3 - Conference article

AN - SCOPUS:84924388426

SN - 0272-9172

VL - 1670

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

Y2 - 21 April 2014 through 25 April 2014

ER -

A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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