A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Shou Ren Zhao, Zhi Peng Huang, Lei Sun, Peng Chao Sun, Chuan Jun Zhang, Yun Hua Wu, Hong Cao, Shan Li Wang, Jun Hao Chu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (εb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (εb) and the reverse saturation current density (Jεb0) is revised and the experimental data are consistent with the simulation results very well.

Original languageEnglish (US)
Article number168801
JournalWuli Xuebao/Acta Physica Sinica
Volume62
Issue number16
DOIs
StatePublished - Aug 20 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • CdS/CdTe thin film solar cell
  • Current-votage characteristics
  • Roll-over
  • Schottky barrier

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