A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Shou Ren Zhao; Zhi Peng Huang; Lei Sun; Peng Chao Sun; Chuan Jun Zhang; Yun Hua Wu; Hong Cao; Shan Li Wang; Jun Hao Chu

doi:10.7498/aps.62.168801

A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Shou Ren Zhao, Zhi Peng Huang, Lei Sun, Peng Chao Sun, Chuan Jun Zhang, Yun Hua Wu, Hong Cao, Shan Li Wang, Jun Hao Chu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (ε_b) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (ε_b) and the reverse saturation current density (Jε_b0) is revised and the experimental data are consistent with the simulation results very well.

Original language	English (US)
Article number	168801
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	62
Issue number	16
DOIs	https://doi.org/10.7498/aps.62.168801
State	Published - Aug 20 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

CdS/CdTe thin film solar cell
Current-votage characteristics
Roll-over
Schottky barrier

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10.7498/aps.62.168801

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@article{f1eaf654659e4aa2b0227dee031d271e,

title = "A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells",

abstract = "Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (εb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (εb) and the reverse saturation current density (Jεb0) is revised and the experimental data are consistent with the simulation results very well.",

keywords = "CdS/CdTe thin film solar cell, Current-votage characteristics, Roll-over, Schottky barrier",

author = "Zhao, {Shou Ren} and Huang, {Zhi Peng} and Lei Sun and Sun, {Peng Chao} and Zhang, {Chuan Jun} and Wu, {Yun Hua} and Hong Cao and Wang, {Shan Li} and Chu, {Jun Hao}",

year = "2013",

month = aug,

day = "20",

doi = "10.7498/aps.62.168801",

language = "English (US)",

volume = "62",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Science Press",

number = "16",

}

TY - JOUR

T1 - A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

AU - Zhao, Shou Ren

AU - Huang, Zhi Peng

AU - Sun, Lei

AU - Sun, Peng Chao

AU - Zhang, Chuan Jun

AU - Wu, Yun Hua

AU - Cao, Hong

AU - Wang, Shan Li

AU - Chu, Jun Hao

PY - 2013/8/20

Y1 - 2013/8/20

N2 - Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (εb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (εb) and the reverse saturation current density (Jεb0) is revised and the experimental data are consistent with the simulation results very well.

AB - Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (εb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (εb) and the reverse saturation current density (Jεb0) is revised and the experimental data are consistent with the simulation results very well.

KW - CdS/CdTe thin film solar cell

KW - Current-votage characteristics

KW - Roll-over

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=84884196383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884196383&partnerID=8YFLogxK

U2 - 10.7498/aps.62.168801

DO - 10.7498/aps.62.168801

M3 - Article

AN - SCOPUS:84884196383

SN - 1000-3290

VL - 62

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 16

M1 - 168801

ER -

A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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