A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices

Laurent Montès, Galina F. Grom, Rishi Krishnan, Philippe M. Fauchet, Leonid Tsybeskov, Bruce E. White

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A quantum structure based on Si/SiO2 and fabricated using standard Si technology has strong potential for applications in non-volatile and scaled dynamic memories. Among standard requirements, such as long retention time and endurance, a structure utilizing resonant tunneling offers lower bias operation and faster write/read cycle. In addition, degradation effects associated with Fowlher-Nordheim (FN) hot electron tunneling can be avoided. Superlattices of nanometer size layers of silicon and silicon dioxide were obtained by sputtering. The size of the silicon nanocrystallites (nc-Si) is fixed by the thickness of the silicon layer which limits the size dispersion. A detailed analysis of the storage of charges in the dots, as a function of the nanocrystals size, is investigated using capacitance methods. Constant voltage and constant capacitance techniques are used to monitor the discharge of the structure. Room temperature non-volatile memory with retention times as long as months is evidenced.

Original languageEnglish (US)
Pages (from-to)F231-F236
JournalMaterials Research Society Symposium - Proceedings
Volume638
StatePublished - Jan 1 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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