A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices

Keyphrases

• Capacitance Method 50%
• Capacitance Technique 50%
• Constant Voltage 50%
• Degradation Effect 50%
• Dynamic Memory 50%
• Electron Tunneling 50%
• Hot Electrons 50%
• Long Retention Time 50%
• Low Bias 50%
• Memory Device 100%
• Nanocrystal Size 50%
• Nanocrystalline Silicon 100%
• Nanometer Size 50%
• Non-volatile 50%
• Non-volatile Memory 50%
• Quantum Structures 50%
• Read Cycle 50%
• Resonant Tunneling 100%
• Retention Time 50%
• Room Temperature 50%
• Si Technology 50%
• Si-SiO2 50%
• Silicon Dioxide 50%
• Silicon Layer 50%
• Silicon Nanocrystallites 50%
• Size Dispersion 50%
• Strong Potential 50%
• Superlattices 100%

Material Science

• Capacitance 66%
• Hot Electron 33%
• Nanocrystalline Silicon 100%
• Nanocrystallites 33%
• Nanocrystals 33%
• Silicon 100%
• Silicon Dioxide 33%
• Superlattice 100%