We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 → 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics