A method and apparatus for surface modification by gas-cluster ion impact

J. A. Northby; T. Jiang; G. H. Takaoka; I. Yamada; W. L. Brown; M. Sosnowski

doi:10.1016/0168-583X(93)95072-D

A method and apparatus for surface modification by gas-cluster ion impact

J. A. Northby, T. Jiang, G. H. Takaoka, I. Yamada, W. L. Brown, M. Sosnowski

Electrical and Computer Engineering

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Abstract

We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 → 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.

Original language	English (US)
Pages (from-to)	336-340
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	74
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-583X(93)95072-D
State	Published - Apr 2 1993

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(93)95072-D

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abstract = "We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 → 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.",

author = "Northby, {J. A.} and T. Jiang and Takaoka, {G. H.} and I. Yamada and Brown, {W. L.} and M. Sosnowski",

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T1 - A method and apparatus for surface modification by gas-cluster ion impact

AU - Northby, J. A.

AU - Jiang, T.

AU - Takaoka, G. H.

AU - Yamada, I.

AU - Brown, W. L.

AU - Sosnowski, M.

PY - 1993/4/2

Y1 - 1993/4/2

N2 - We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 → 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.

AB - We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 → 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.

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JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-2

ER -

A method and apparatus for surface modification by gas-cluster ion impact

Abstract

All Science Journal Classification (ASJC) codes

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