Abstract
This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. The principle of operation is discussed and the apparatus is described. An example is demonstrated to illustrate the application of the technique.
Original language | English (US) |
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Pages (from-to) | 102-105 |
Number of pages | 4 |
Journal | Measurement Science and Technology |
Volume | 7 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1996 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Engineering (miscellaneous)
- Applied Mathematics