This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. The principle of operation is discussed and the apparatus is described. An example is demonstrated to illustrate the application of the technique.
|Original language||English (US)|
|Number of pages||4|
|Journal||Measurement Science and Technology|
|State||Published - Jan 1996|
All Science Journal Classification (ASJC) codes
- Engineering (miscellaneous)
- Applied Mathematics