Abstract
This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. The principle of operation is discussed and the apparatus is described. An example is demonstrated to illustrate the application of the technique.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 102-105 |
| Number of pages | 4 |
| Journal | Measurement Science and Technology |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1996 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Engineering (miscellaneous)
- Applied Mathematics