TY - GEN
T1 - A non contact characterization technique of the defect states of high k dielectrics using THz radiation
AU - Sengupta, Amartya
AU - Bandyopadhyay, Aparajita
AU - Federici, John F.
AU - Grebel, Haim
AU - Pham, Daniel
PY - 2006
Y1 - 2006
N2 - The effect of high-k dielectric Hafnium dioxide films on 200mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time-resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.
AB - The effect of high-k dielectric Hafnium dioxide films on 200mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time-resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.
KW - Characterization
KW - Defect states
KW - High dielectric constant materials
KW - Microelectronics
KW - Terahertz time domain spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=50649105509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50649105509&partnerID=8YFLogxK
U2 - 10.1109/SARNOF.2006.4534806
DO - 10.1109/SARNOF.2006.4534806
M3 - Conference contribution
AN - SCOPUS:50649105509
SN - 1424400023
SN - 9781424400027
T3 - 2006 IEEE Sarnoff Symposium
BT - 2006 IEEE Sarnoff Symposium
T2 - 2006 IEEE Sarnoff Symposium
Y2 - 27 March 2006 through 28 March 2006
ER -