A non contact characterization technique of the defect states of high k dielectrics using THz radiation

Amartya Sengupta, Aparajita Bandyopadhyay, John F. Federici, Haim Grebel, Daniel Pham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of high-k dielectric Hafnium dioxide films on 200mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time-resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.

Original languageEnglish (US)
Title of host publication2006 IEEE Sarnoff Symposium
DOIs
StatePublished - 2006
Event2006 IEEE Sarnoff Symposium - Princeton, NJ, United States
Duration: Mar 27 2006Mar 28 2006

Publication series

Name2006 IEEE Sarnoff Symposium

Other

Other2006 IEEE Sarnoff Symposium
Country/TerritoryUnited States
CityPrinceton, NJ
Period3/27/063/28/06

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Communication

Keywords

  • Characterization
  • Defect states
  • High dielectric constant materials
  • Microelectronics
  • Terahertz time domain spectroscopy

Fingerprint

Dive into the research topics of 'A non contact characterization technique of the defect states of high k dielectrics using THz radiation'. Together they form a unique fingerprint.

Cite this