A non contact characterization technique of the defect states of high k dielectrics using THz radiation

Amartya Sengupta, Aparajita Bandyopadhyay, John Federici, Haim Grebel, Daniel Pham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of high-k dielectric Hafnium dioxide films on 200mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time-resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.

Original languageEnglish (US)
Title of host publication2006 IEEE Sarnoff Symposium
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE Sarnoff Symposium - Princeton, NJ, United States
Duration: Mar 27 2006Mar 28 2006

Other

Other2006 IEEE Sarnoff Symposium
CountryUnited States
CityPrinceton, NJ
Period3/27/063/28/06

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Communication

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