In this paper, a novel β-Ga2O3 high electron mobility transistor (BGO-HEMT) with record-high intrinsic unity current gain cut-off frequency (fT) of 166 GHz and RF output power (POUT) of 2.91 W/mm is demonstrated through 2D device simulations using an appropriate negative differential mobility model. The highly scaled proposed device uses 10 nm AlN barrier layer on 50 nm β-Ga2O3 buffer with gate-length (LG) of 50 nm and aspect-ratio (gate length to barrier thickness) of 5 ensures significant gain in high-frequency performance. The novel device design offers very low access and dynamic resistance due to highly doped n+ access regions, and a finite gap between ohmic contacts and barrier layer to mitigate source choking effect. The device's superior DC and RF performance is well supported by large two-dimensional electron gas (2DEG) density (ns) of the order of 1013 cm−2 due to large band discontinuity in AlN/β-Ga2O3 heterostructure and highly polarized AlN material. The device shows maximum drain current density (IDMAX) of ~11.5 A/mm and peak transconductance (gm) of 0.917 S/mm at VDS = 15 V and VGS = 0 and − 7 V respectively. Furthermore, the term 2π (fT × LG) for the device shows a value of 0.5 × 107 cm/s, very close to vsat of 1.5 × 107 cm/s in β-Ga2O3. These promising results enhance the potential of β-Ga2O3 for future high power RF and microwave applications.
|Original language||English (US)|
|Journal||International Journal of Numerical Modelling: Electronic Networks, Devices and Fields|
|State||Published - Jan 1 2021|
All Science Journal Classification (ASJC) codes
- Modeling and Simulation
- Computer Science Applications
- Electrical and Electronic Engineering