A novel β-Ga₂O₃ HEMT with f_T of 166 GHz and X-band P_OUT of 2.91 W/mm

Keyphrases

• X-band 100%
• GHz Band 100%
• Ga2O3 100%
• Barrier Layer 33%
• Gate Length 33%
• Device Design 16%
• Mobility Model 16%
• Gas Density 16%
• High Power Microwave 16%
• Highly Doped 16%
• Heterostructure 16%
• Dynamic Resistance 16%
• Aspect Ratio 16%
• Device Use 16%
• Transconductance 16%
• High-power RF 16%
• Ohmic Contact 16%
• 2-dimensional Electron Gas (2DEG) 16%
• 2D Device Simulation 16%
• Contact Layer 16%
• Drain Current Density 16%
• RF Performance 16%
• Access Resistance 16%
• Choking Effect 16%
• Finite Gap 16%
• Large Band 16%
• DC Performance 16%
• Negative Differential Mobility 16%
• Microwave Applications 16%
• RF Applications 16%
• RF Output Power 16%
• Current Gain Cutoff Frequency 16%
• AlN Barrier 16%
• High Electron Mobility Transistor 16%
• Band Discontinuity 16%
• Access Region 16%
• Barrier Thickness 16%
• High-frequency Performance 16%

Engineering

• Barrier Layer 100%
• Gate Length 100%
• X-Band 100%
• Heterojunctions 50%
• Two Dimensional 50%
• Output Power 50%
• Aspect Ratio 50%
• Current Drain 50%
• Current Gain 50%
• Gas Density 50%
• Ohmic Contacts 50%
• Cutoff Frequency 50%
• Dynamic Resistance 50%
• Access Region 50%

Material Science

• Aluminum Nitride 100%
• Density 33%
• Heterojunction 33%
• Density of Gases 33%
• Novel Device 33%
• Transistor 33%
• Electron Mobility 33%
• Microwave Technology 33%