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A novel 3-D magnetic field sensor in standard CMOS technology
Mingming Zhang
,
Durga Misra
Electrical and Computer Engineering
Research output
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Chapter in Book/Report/Conference proceeding
›
Conference contribution
2
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Scopus citations
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Keyphrases
CMOS Technology
100%
3D Magnetic Field
100%
Standard CMOS Technology
100%
Magnetic Field Sensor
100%
Right Angle
50%
Applied Magnetic Field
50%
Field Component
50%
Electrical Characteristics
50%
Two-field
50%
Noise Performance
50%
Simulation Software
50%
Third Component
50%
Surface Potential
50%
MOS Devices
50%
2D Device Simulation
50%
Pisces
50%
Z-direction
50%
Relative Sensitivity
50%
Device Control
50%
Magnetic Field-effect Transistor (MAGFET)
50%
Lateral Flow Device
50%
Lateral Insulated Gate Bipolar Transistor (LIGBT)
50%
Magnetotransistor
50%
Base Surface
50%
Geometry Optimization
50%
Cross-sensitivity
50%
High Current Gain
50%
Engineering
Magnetic Field
100%
Applied Magnetic Field
50%
Simulation Software
50%
Noise Performance
50%
Surface Potential
50%
Current Gain
50%
Bipolar Transistor
50%
Relative Sensitivity
50%
Material Science
Control Component
100%
Bipolar Transistor
100%
Physics
Magnetic Field
100%
Bipolar Transistor
33%