A novel high gain MOS magnetic field sensor

D. Misra, T. R. Viswanathan, E. L. Heasell

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


A new geometry for the split-drain MAGFET is proposed. The behavior of the device was studied over a wide range of temperatures. A novel method of interconnecting many NAGFETs was shown to improve transduction.

Original languageEnglish (US)
Pages (from-to)213-221
Number of pages9
JournalSensors and Actuators
Issue number3
StatePublished - May 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering


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