Abstract
A new geometry for the split-drain MAGFET is proposed. The behavior of the device was studied over a wide range of temperatures. A novel method of interconnecting many NAGFETs was shown to improve transduction.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 213-221 |
| Number of pages | 9 |
| Journal | Sensors and Actuators |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1986 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering