A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Zhen Yi Yang, Chi Wah Leung, P. T. Lai, P. W.T. Pong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.

Original languageEnglish (US)
Title of host publication2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509024391
DOIs
StatePublished - Aug 12 2016
Externally publishedYes
Event5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan, Province of China
Duration: May 4 2016May 6 2016

Publication series

Name2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Conference

Conference5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period5/4/165/6/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Keywords

  • Si/SiO interface
  • interface traps
  • magnetic sensitivity
  • sectorial SD-MAGFETs

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