@inproceedings{e16f36d111314099be4771363a24289d,
title = "A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET",
abstract = "This work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.",
keywords = "Si/SiO interface, interface traps, magnetic sensitivity, sectorial SD-MAGFETs",
author = "Yang, {Zhen Yi} and Leung, {Chi Wah} and Lai, {P. T.} and Pong, {P. W.T.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",
year = "2016",
month = aug,
day = "12",
doi = "10.1109/ISNE.2016.7543340",
language = "English (US)",
series = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",
address = "United States",
}