A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole

T. Skotheim; I. Lundström; A. E. Delahoy; F. J. Kampas; P. E. Vanier

doi:10.1063/1.93039

A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole

T. Skotheim, I. Lundström, A. E. Delahoy, F. J. Kampas, P. E. Vanier

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Electrochemical Schottky barrier devices with polypyrrole coated hydrogenated amorphous silicon, (a-Si:H), as photoanodes and a variety of aqueous redox solutions have been investigated. The open circuit voltage reaches 0.63 V for most anodic redox couples and exhibits a high degree of surface pinning due to the barrier formed between a-Si:H and the highly conductive polypyrrole. We report a substantial improvement in the stability of the polypyrrole coated electrodes compared with the bare a-Si:H. The efficiency of the present devices is limited by low photocurrent and fill factor.

Original language	English (US)
Pages (from-to)	281-283
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	3
DOIs	https://doi.org/10.1063/1.93039
State	Published - 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.93039

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title = "A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole",

abstract = "Electrochemical Schottky barrier devices with polypyrrole coated hydrogenated amorphous silicon, (a-Si:H), as photoanodes and a variety of aqueous redox solutions have been investigated. The open circuit voltage reaches 0.63 V for most anodic redox couples and exhibits a high degree of surface pinning due to the barrier formed between a-Si:H and the highly conductive polypyrrole. We report a substantial improvement in the stability of the polypyrrole coated electrodes compared with the bare a-Si:H. The efficiency of the present devices is limited by low photocurrent and fill factor.",

author = "T. Skotheim and I. Lundstr{\"o}m and Delahoy, {A. E.} and Kampas, {F. J.} and Vanier, {P. E.}",

year = "1982",

doi = "10.1063/1.93039",

language = "English (US)",

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pages = "281--283",

journal = "Applied Physics Letters",

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T1 - A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole

AU - Skotheim, T.

AU - Lundström, I.

AU - Delahoy, A. E.

AU - Kampas, F. J.

AU - Vanier, P. E.

PY - 1982

Y1 - 1982

N2 - Electrochemical Schottky barrier devices with polypyrrole coated hydrogenated amorphous silicon, (a-Si:H), as photoanodes and a variety of aqueous redox solutions have been investigated. The open circuit voltage reaches 0.63 V for most anodic redox couples and exhibits a high degree of surface pinning due to the barrier formed between a-Si:H and the highly conductive polypyrrole. We report a substantial improvement in the stability of the polypyrrole coated electrodes compared with the bare a-Si:H. The efficiency of the present devices is limited by low photocurrent and fill factor.

AB - Electrochemical Schottky barrier devices with polypyrrole coated hydrogenated amorphous silicon, (a-Si:H), as photoanodes and a variety of aqueous redox solutions have been investigated. The open circuit voltage reaches 0.63 V for most anodic redox couples and exhibits a high degree of surface pinning due to the barrier formed between a-Si:H and the highly conductive polypyrrole. We report a substantial improvement in the stability of the polypyrrole coated electrodes compared with the bare a-Si:H. The efficiency of the present devices is limited by low photocurrent and fill factor.

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ER -

A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole

Abstract

All Science Journal Classification (ASJC) codes

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