Abstract
Electrochemical Schottky barrier devices with polypyrrole coated hydrogenated amorphous silicon, (a-Si:H), as photoanodes and a variety of aqueous redox solutions have been investigated. The open circuit voltage reaches 0.63 V for most anodic redox couples and exhibits a high degree of surface pinning due to the barrier formed between a-Si:H and the highly conductive polypyrrole. We report a substantial improvement in the stability of the polypyrrole coated electrodes compared with the bare a-Si:H. The efficiency of the present devices is limited by low photocurrent and fill factor.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 281-283 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1982 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)