A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

L. Tsybeskov; K. L. Moore; S. P. Duttagupta; K. D. Hirschman; D. G. Hall; P. M. Fauchet

doi:10.1063/1.117276

A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

L. Tsybeskov, K. L. Moore, S. P. Duttagupta, K. D. Hirschman, D. G. Hall, P. M. Fauchet

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm² and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Original language	English (US)
Pages (from-to)	3411-3413
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117276
State	Published - Nov 25 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.117276

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title = "A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV",

abstract = "We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.",

author = "L. Tsybeskov and Moore, {K. L.} and Duttagupta, {S. P.} and Hirschman, {K. D.} and Hall, {D. G.} and Fauchet, {P. M.}",

year = "1996",

month = nov,

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doi = "10.1063/1.117276",

language = "English (US)",

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T1 - A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

AU - Tsybeskov, L.

AU - Moore, K. L.

AU - Duttagupta, S. P.

AU - Hirschman, K. D.

AU - Hall, D. G.

AU - Fauchet, P. M.

PY - 1996/11/25

Y1 - 1996/11/25

N2 - We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

AB - We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

Abstract

All Science Journal Classification (ASJC) codes

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