A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

L. Tsybeskov, K. L. Moore, S. P. Duttagupta, K. D. Hirschman, D. G. Hall, P. M. Fauchet

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Original languageEnglish (US)
Pages (from-to)3411-3413
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number22
DOIs
StatePublished - Nov 25 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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