A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

L. Tsybeskov; K. L. Moore; S. P. Duttagupta; K. D. Hirschman; D. G. Hall; P. M. Fauchet

doi:10.1063/1.117276

A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

L. Tsybeskov
, K. L. Moore
, S. P. Duttagupta
, K. D. Hirschman
, D. G. Hall
, P. M. Fauchet

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm² and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Original language	English (US)
Pages (from-to)	3411-3413
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117276
State	Published - Nov 25 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.117276

Cite this

@article{9d332bbfdac64a7d98504ed342b1bf2d,

title = "A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV",

abstract = "We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.",

author = "L. Tsybeskov and Moore, \{K. L.\} and Duttagupta, \{S. P.\} and Hirschman, \{K. D.\} and Hall, \{D. G.\} and Fauchet, \{P. M.\}",

year = "1996",

month = nov,

day = "25",

doi = "10.1063/1.117276",

language = "English (US)",

volume = "69",

pages = "3411--3413",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

AU - Tsybeskov, L.

AU - Moore, K. L.

AU - Duttagupta, S. P.

AU - Hirschman, K. D.

AU - Hall, D. G.

AU - Fauchet, P. M.

PY - 1996/11/25

Y1 - 1996/11/25

N2 - We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

AB - We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

UR - https://www.scopus.com/pages/publications/0039561930

UR - https://www.scopus.com/pages/publications/0039561930#tab=citedBy

U2 - 10.1063/1.117276

DO - 10.1063/1.117276

M3 - Article

AN - SCOPUS:0039561930

SN - 0003-6951

VL - 69

SP - 3411

EP - 3413

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this