A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

Jiahua Tao; Kezhi Zhang; Chuanjun Zhang; Leilei Chen; Huiyi Cao; Junfeng Liu; Jinchun Jiang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1039/c5cc01170a

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

Jiahua Tao, Kezhi Zhang, Chuanjun Zhang, Leilei Chen, Huiyi Cao, Junfeng Liu, Jinchun Jiang, Lin Sun, Pingxiong Yang, Junhao Chu

New Jersey Innovation Institute

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

Cu₂ZnSnS₄ thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

Original language	English (US)
Pages (from-to)	10337-10340
Number of pages	4
Journal	Chemical Communications
Volume	51
Issue number	51
DOIs	https://doi.org/10.1039/c5cc01170a
State	Published - Jun 28 2015

All Science Journal Classification (ASJC) codes

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/c5cc01170a

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title = "A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency",

abstract = "Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.",

author = "Jiahua Tao and Kezhi Zhang and Chuanjun Zhang and Leilei Chen and Huiyi Cao and Junfeng Liu and Jinchun Jiang and Lin Sun and Pingxiong Yang and Junhao Chu",

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doi = "10.1039/c5cc01170a",

language = "English (US)",

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TY - JOUR

T1 - A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

AU - Tao, Jiahua

AU - Zhang, Kezhi

AU - Zhang, Chuanjun

AU - Chen, Leilei

AU - Cao, Huiyi

AU - Liu, Junfeng

AU - Jiang, Jinchun

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2015/6/28

Y1 - 2015/6/28

N2 - Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

AB - Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

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U2 - 10.1039/c5cc01170a

DO - 10.1039/c5cc01170a

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EP - 10340

JO - Chemical Communications

JF - Chemical Communications

IS - 51

ER -

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

Abstract

All Science Journal Classification (ASJC) codes

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