A Study of Reactive Ion Etching (CF4+ O2Plasma) Induced Deep Levels in Silicon

D. Misra, E. L. Heasell

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The reactive ion etching (RIE) (CF4+ O2plasma) of a SiO2 film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around Ec-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.

Original languageEnglish (US)
Pages (from-to)956-958
Number of pages3
JournalJournal of the Electrochemical Society
Issue number4
StatePublished - Apr 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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