A Study of Reactive Ion Etching (CF4+ O2Plasma) Induced Deep Levels in Silicon

D. Misra; E. L. Heasell

doi:10.1149/1.2100602

A Study of Reactive Ion Etching (CF₄+ O₂Plasma) Induced Deep Levels in Silicon

D. Misra, E. L. Heasell

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The reactive ion etching (RIE) (CF₄+ O₂plasma) of a SiO₂ film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around E_c-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.

Original language	English (US)
Pages (from-to)	956-958
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	134
Issue number	4
DOIs	https://doi.org/10.1149/1.2100602
State	Published - Apr 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2100602

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abstract = "The reactive ion etching (RIE) (CF4+ O2plasma) of a SiO2 film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around Ec-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.",

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N2 - The reactive ion etching (RIE) (CF4+ O2plasma) of a SiO2 film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around Ec-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.

AB - The reactive ion etching (RIE) (CF4+ O2plasma) of a SiO2 film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around Ec-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.

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A Study of Reactive Ion Etching (CF₄+ O₂Plasma) Induced Deep Levels in Silicon

Abstract

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