The reactive ion etching (RIE) (CF4+ O2plasma) of a SiO2 film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n-Si Schottky diodes. An electron trap level is created at around Ec-0.23 eV. The ion energy dependence of the trap levels is investigated. The I-V and C-V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry