A Study of Reactive Ion Etching (CF₄+ O₂Plasma) Induced Deep Levels in Silicon

Keyphrases

• Reactive Ion Etching 100%
• O2 Plasma 100%
• Trap Level 66%
• Electron Traps 33%
• SiO2 Film 33%
• Ion Energy 33%
• Deep Level Transient Spectroscopy 33%
• Schottky Diode 33%
• Energy Dependence 33%
• Wet Etch Process 33%
• N-Si 33%
• C-V Characteristics 33%

Material Science

• Silicon 100%
• Reactive Ion Etching 100%
• Film 33%
• Schottky Diode 33%
• Deep-Level Transient Spectroscopy 33%
• Wet Etching 33%