A study of single chamber RF-PECVD μc-Si solar cells

Yuan Min Li, J. A. Anna Selvan, Liwei Li, Roland A. Levy, Alan E. Delahoy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO2-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1788-1791
Number of pages4
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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