We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO2-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.