A study of single chamber RF-PECVD μc-Si solar cells

Yuan Min Li; J. A. Anna Selvan; Liwei Li; Roland A. Levy; Alan E. Delahoy

A study of single chamber RF-PECVD μc-Si solar cells

Yuan Min Li, J. A. Anna Selvan, Liwei Li, Roland A. Levy, Alan E. Delahoy

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO₂-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.

Original language	English (US)
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1788-1791
Number of pages	4
State	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: May 11 2003 → May 18 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Other

Other	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	5/11/03 → 5/18/03

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Li, Y. M., Anna Selvan, J. A., Li, L., Levy, R. A., & Delahoy, A. E. (2003). A study of single chamber RF-PECVD μc-Si solar cells. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1788-1791). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

@inproceedings{744bcbefdc28407ea05d031be075f3e0,

title = "A study of single chamber RF-PECVD μc-Si solar cells",

abstract = "We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO2-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.",

author = "Li, {Yuan Min} and {Anna Selvan}, {J. A.} and Liwei Li and Levy, {Roland A.} and Delahoy, {Alan E.}",

year = "2003",

language = "English (US)",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1788--1791",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Li, YM, Anna Selvan, JA, Li, L, Levy, RA & Delahoy, AE 2003, A study of single chamber RF-PECVD μc-Si solar cells. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1788-1791, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 5/11/03.

A study of single chamber RF-PECVD μc-Si solar cells. / Li, Yuan Min; Anna Selvan, J. A.; Li, Liwei et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1788-1791 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A study of single chamber RF-PECVD μc-Si solar cells

AU - Li, Yuan Min

AU - Anna Selvan, J. A.

AU - Li, Liwei

AU - Levy, Roland A.

AU - Delahoy, Alan E.

PY - 2003

Y1 - 2003

N2 - We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO2-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.

AB - We report on a study of p-i-n type single junction solar cells with microcrystalline silicon (μc-Si:H) i-layers, deposited entirely in a single chamber, batch-process type RF-PECVD system without load-lock, using the hydrogen dilution method. Conversion efficiency of 5% has been obtained on inexpensive, commercial SnO2-coated, 3-mm thick soda-lime glass superstrates, using Al back contact without efficient back reflector. The most critical process step is the seeding procedure by which μc-Si:H absorber (the i-layer) is grown over amorphous-Si under-layers. Seeding by boron-doped p-layer leads to superior devices of excellent stability than seeding inside i-layer. A great challenge is the pronounced non-uniformity of μc-Si:H solar cells. Single chamber operation issues with cross-contamination and process gas purity are discussed.

UR - http://www.scopus.com/inward/record.url?scp=6344294194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344294194&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344294194

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1788

EP - 1791

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

A study of single chamber RF-PECVD μc-Si solar cells

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