A survey of the potential of an IrSi Schottky barrier MOSFET based on simulation studies

Durgamadhab Misra, V. S. Simhadri

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Schottky barrier MOSFETs are expected to offer certain fabrication advantages, low series resistance and the feasibility to go into submicron technology eliminating short-channel effects and latchup in CMOS circuits. A p-channel MOSFET using IrSi Schottky contacts as source and drain is reviewed theoretically. The limitations of the device arising from the oxide offset between source/channel is studied with the help of a 1-D simulation program SEDAN. Since the process sequence leads to an offset between source and channel, the performance of the SBMOSFETs with and without an offset is estimated using the 2-D device simulation program PISCES for PtSi or IrSi as source and drain materials. The simulation results show a considerable gain improvement for a modified device structure (i.e. without offset: gate overlapping source-drain edges). The gain of the device with an overlapping gate using PtSi and IrSi is 32 and 82% of a conventional MOSFET's gain, respectively.

Original languageEnglish (US)
Pages (from-to)829-833
Number of pages5
JournalSolid State Electronics
Volume35
Issue number6
DOIs
StatePublished - Jan 1 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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