Schottky barrier MOSFETs are expected to offer certain fabrication advantages, low series resistance and the feasibility to go into submicron technology eliminating short-channel effects and latchup in CMOS circuits. A p-channel MOSFET using IrSi Schottky contacts as source and drain is reviewed theoretically. The limitations of the device arising from the oxide offset between source/channel is studied with the help of a 1-D simulation program SEDAN. Since the process sequence leads to an offset between source and channel, the performance of the SBMOSFETs with and without an offset is estimated using the 2-D device simulation program PISCES for PtSi or IrSi as source and drain materials. The simulation results show a considerable gain improvement for a modified device structure (i.e. without offset: gate overlapping source-drain edges). The gain of the device with an overlapping gate using PtSi and IrSi is 32 and 82% of a conventional MOSFET's gain, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry