TY - GEN
T1 - Advances in large area CIGS technology
AU - Delahoy, Alan
AU - Bruns, Juergen
AU - Chen, Liangfan
AU - Akhtar, Masud
AU - Kiss, Zoltan
AU - Contreras, Miguel
N1 - Publisher Copyright:
© 2000 IEEE.
PY - 2000
Y1 - 2000
N2 - This paper describes results in several areas that, taken as a whole, significantly contribute to the advancement of CIGS PV technology based on vacuum deposition. These results include the large area sputtering of Mo suitable for very high efficiency cells, the improved delivery of Cu by linear source evaporation for large area vacuum deposition of CIGS, a promising non-Cd buffer layer capable of vacuum deposition, and improvement of the properties of doped ZnO.
AB - This paper describes results in several areas that, taken as a whole, significantly contribute to the advancement of CIGS PV technology based on vacuum deposition. These results include the large area sputtering of Mo suitable for very high efficiency cells, the improved delivery of Cu by linear source evaporation for large area vacuum deposition of CIGS, a promising non-Cd buffer layer capable of vacuum deposition, and improvement of the properties of doped ZnO.
UR - http://www.scopus.com/inward/record.url?scp=84949560741&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949560741&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.916163
DO - 10.1109/PVSC.2000.916163
M3 - Conference contribution
AN - SCOPUS:84949560741
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1437
EP - 1440
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -