TY - GEN
T1 - Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes
T2 - 2nd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2022
AU - Velpula, Ravi Teja
AU - Jain, Barsha
AU - Das, Samadrita
AU - Lenka, Trupti Ranjan
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
PY - 2023
Y1 - 2023
N2 - The p-type AlGaN electron barrier layer (EBL) has been widely used to suppress electron leakage from the active region of AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs). However, the conventional EBL can reduce the electron leakage partially and invertedly affects the hole injection due to the formation of positive polarization sheet charges at the hetero-interface. Recently, EBL-free LED structures have received significant attention due to the improved carrier transportation and reduced electron leakage. In this context, we present a novel band-engineered EBL-free AlGaN UV LED structure that uses polarization-controlled composition-graded convex quantum barriers (QBs) instead of traditional QBs and analyzed its performance theoretically. Our proposed structure opens a new path to control the electron leakage due to both a gradual increase in the effective conduction band barrier height and mitigated electrostatic field in the active region. As a result, the internal quantum efficiency and output power of the reported EBL-free structure are boosted significantly compared to the traditional AlGaN UV LED at ~260 nm emission wavelength. Experimental demonstration of such a unique LED design can show the way to generate high-power deep UV light sources for practical applications.
AB - The p-type AlGaN electron barrier layer (EBL) has been widely used to suppress electron leakage from the active region of AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs). However, the conventional EBL can reduce the electron leakage partially and invertedly affects the hole injection due to the formation of positive polarization sheet charges at the hetero-interface. Recently, EBL-free LED structures have received significant attention due to the improved carrier transportation and reduced electron leakage. In this context, we present a novel band-engineered EBL-free AlGaN UV LED structure that uses polarization-controlled composition-graded convex quantum barriers (QBs) instead of traditional QBs and analyzed its performance theoretically. Our proposed structure opens a new path to control the electron leakage due to both a gradual increase in the effective conduction band barrier height and mitigated electrostatic field in the active region. As a result, the internal quantum efficiency and output power of the reported EBL-free structure are boosted significantly compared to the traditional AlGaN UV LED at ~260 nm emission wavelength. Experimental demonstration of such a unique LED design can show the way to generate high-power deep UV light sources for practical applications.
KW - Convex quantum barriers
KW - Electron blocking layer (EBL)
KW - Electron leakage
KW - Internal quantum efficiency (IQE)
KW - Polarization
UR - http://www.scopus.com/inward/record.url?scp=85138816637&partnerID=8YFLogxK
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U2 - 10.1007/978-981-19-2308-1_11
DO - 10.1007/978-981-19-2308-1_11
M3 - Conference contribution
AN - SCOPUS:85138816637
SN - 9789811923074
T3 - Lecture Notes in Electrical Engineering
SP - 97
EP - 102
BT - Micro and Nanoelectronics Devices, Circuits and Systems - Select Proceedings of MNDCS 2022
A2 - Lenka, Trupti Ranjan
A2 - Misra, Durgamadhab
A2 - Fu, Lan
PB - Springer Science and Business Media Deutschland GmbH
Y2 - 29 January 2022 through 31 January 2022
ER -