ALD Hf_0.2Zr_0.8O₂ and HfO₂ with cyclic annealing/SPA plasma treatment: Reliability

Keyphrases

• HfO2 100%
• Silicon Oxynitride (SiON) 100%
• Plasma Treatment 100%
• Cyclic Annealing 100%
• Plasma Exposure 66%
• Equivalent Oxide Thickness 66%
• Cyclic Deposition 66%
• Oxynitride 66%
• Antenna 33%
• Order of Magnitude 33%
• Control Device 33%
• Downscaling 33%
• Annealing 33%
• Increased Reliability 33%
• Time Reduction 33%
• Gate Injection 33%
• Interfacial Layer 33%
• Injection Mode 33%
• Interface State Density 33%
• Constant Voltage Stress 33%
• Dielectric Deposition 33%
• Ar Plasma 33%
• Stress Induced Leakage Current 33%
• Trap Formation 33%
• Flat-band Voltage 33%
• Atomic Layer Deposited 33%
• Failure Time 33%
• Oxide Traps 33%
• Three-order 33%
• Gate Leakage Current 33%
• As-deposited 33%

Engineering

• Plasma Treatment 100%
• Oxide Thickness 100%
• Antenna 50%
• Atomic Layer 50%
• Dielectrics 50%
• Interfacial Layer 50%
• Constant Voltage 50%
• Interface State 50%
• Stress Induced Leakage Current 50%
• Ar Plasma 50%
• Control Sample 50%

Material Science

• Oxide Compound 100%
• Oxynitride 66%
• Film 33%
• Dielectric Material 33%
• Density 33%
• Control Component 33%