AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

S. Gautier; T. Aggerstam; A. Pinos; S. Marcinkevičius; K. Liu; M. Shur; S. M. O'Malley; A. A. Sirenko; Z. Djebbour; A. Migan-Dubois; T. Moudakir; A. Ougazzaden

doi:10.1016/j.jcrysgro.2008.08.040

AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

S. Gautier, T. Aggerstam, A. Pinos, S. Marcinkevičius, K. Liu, M. Shur, S. M. O'Malley, A. A. Sirenko, Z. Djebbour, A. Migan-Dubois, T. Moudakir, A. Ougazzaden

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Al_xGa_1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

Original language	English (US)
Pages (from-to)	4927-4931
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.040
State	Published - Nov 15 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Metalorganic vapour phase epitaxy
B1. AlGaN
B1. Nitrides
B2. Semiconducting gallium compounds

Access to Document

10.1016/j.jcrysgro.2008.08.040

Cite this

Gautier, S., Aggerstam, T., Pinos, A., Marcinkevičius, S., Liu, K., Shur, M., O'Malley, S. M., Sirenko, A. A., Djebbour, Z., Migan-Dubois, A., Moudakir, T., & Ougazzaden, A. (2008). AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas. Journal of Crystal Growth, 310(23), 4927-4931. https://doi.org/10.1016/j.jcrysgro.2008.08.040

@article{3d531813ba114a01a1c2c763bada1863,

title = "AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas",

abstract = "AlxGa1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.",

keywords = "A3. Metalorganic vapour phase epitaxy, B1. AlGaN, B1. Nitrides, B2. Semiconducting gallium compounds",

author = "S. Gautier and T. Aggerstam and A. Pinos and S. Marcinkevi{\v c}ius and K. Liu and M. Shur and O'Malley, {S. M.} and Sirenko, {A. A.} and Z. Djebbour and A. Migan-Dubois and T. Moudakir and A. Ougazzaden",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.08.040",

language = "English (US)",

volume = "310",

pages = "4927--4931",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "23",

}

Gautier, S, Aggerstam, T, Pinos, A, Marcinkevičius, S, Liu, K, Shur, M, O'Malley, SM, Sirenko, AA, Djebbour, Z, Migan-Dubois, A, Moudakir, T & Ougazzaden, A 2008, 'AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas', Journal of Crystal Growth, vol. 310, no. 23, pp. 4927-4931. https://doi.org/10.1016/j.jcrysgro.2008.08.040

TY - JOUR

T1 - AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

AU - Gautier, S.

AU - Aggerstam, T.

AU - Pinos, A.

AU - Marcinkevičius, S.

AU - Liu, K.

AU - Shur, M.

AU - O'Malley, S. M.

AU - Sirenko, A. A.

AU - Djebbour, Z.

AU - Migan-Dubois, A.

AU - Moudakir, T.

AU - Ougazzaden, A.

PY - 2008/11/15

Y1 - 2008/11/15

N2 - AlxGa1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

AB - AlxGa1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

KW - A3. Metalorganic vapour phase epitaxy

KW - B1. AlGaN

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=56549090672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56549090672&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.08.040

DO - 10.1016/j.jcrysgro.2008.08.040

M3 - Article

AN - SCOPUS:56549090672

SN - 0022-0248

VL - 310

SP - 4927

EP - 4931

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this