AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

S. Gautier, T. Aggerstam, A. Pinos, S. Marcinkevičius, K. Liu, M. Shur, S. M. O'Malley, A. A. Sirenko, Z. Djebbour, A. Migan-Dubois, T. Moudakir, A. Ougazzaden

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4 Scopus citations


AlxGa1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

Original languageEnglish (US)
Pages (from-to)4927-4931
Number of pages5
JournalJournal of Crystal Growth
Issue number23
StatePublished - Nov 15 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


  • A3. Metalorganic vapour phase epitaxy
  • B1. AlGaN
  • B1. Nitrides
  • B2. Semiconducting gallium compounds


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