Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Reginald C. Farrow; Warren K. Waskiewicz; Isik Kizilyalli; Gregg Gallatin; J. Alexander Liddle; Masis Mkrtchyan; Avi Kornblit; Leonidas Ocola; Fred Klemens; Joseph A. Felker; Christopher Biddick; Joseph S. Kraus; Myrtle Blakey; Paul Orphanos; Nace Layadi; Sailesh Merchant

doi:10.1117/12.351093

Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Reginald C. Farrow, Warren K. Waskiewicz, Isik Kizilyalli, Gregg Gallatin, J. Alexander Liddle, Masis Mkrtchyan, Avi Kornblit, Leonidas Ocola, Fred Klemens, Joseph A. Felker, Christopher Biddick, Joseph S. Kraus, Myrtle Blakey, Paul Orphanos, Nace Layadi, Sailesh Merchant

Research output: Contribution to journal › Conference article › peer-review

Abstract

A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO₂/WSi₂ structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 μm line-space patterns yielded mark positions that were repeatable within 20 nm 3σ with a dose of 4 μC/cm² and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.

Original language	English (US)
Pages (from-to)	217-226
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3676
Issue number	I
DOIs	https://doi.org/10.1117/12.351093
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA Duration: Mar 15 1999 → Mar 17 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.351093

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Farrow, R. C., Waskiewicz, W. K., Kizilyalli, I., Gallatin, G., Liddle, J. A., Mkrtchyan, M., Kornblit, A., Ocola, L., Klemens, F., Felker, J. A., Biddick, C., Kraus, J. S., Blakey, M., Orphanos, P., Layadi, N., & Merchant, S. (1999). Alignment mark detection in CMOS materials with SCALPEL e-beam lithography. Proceedings of SPIE - The International Society for Optical Engineering, 3676(I), 217-226. https://doi.org/10.1117/12.351093

@article{cab8509a876e45b992e25a64389cf1a5,

title = "Alignment mark detection in CMOS materials with SCALPEL e-beam lithography",

abstract = "A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 μm line-space patterns yielded mark positions that were repeatable within 20 nm 3σ with a dose of 4 μC/cm2 and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.",

author = "Farrow, {Reginald C.} and Waskiewicz, {Warren K.} and Isik Kizilyalli and Gregg Gallatin and Liddle, {J. Alexander} and Masis Mkrtchyan and Avi Kornblit and Leonidas Ocola and Fred Klemens and Felker, {Joseph A.} and Christopher Biddick and Kraus, {Joseph S.} and Myrtle Blakey and Paul Orphanos and Nace Layadi and Sailesh Merchant",

year = "1999",

doi = "10.1117/12.351093",

language = "English (US)",

volume = "3676",

pages = "217--226",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "I",

note = "Proceedings of the 1999 Emerging Lithographic Technologies III ; Conference date: 15-03-1999 Through 17-03-1999",

}

Farrow, RC, Waskiewicz, WK, Kizilyalli, I, Gallatin, G, Liddle, JA, Mkrtchyan, M, Kornblit, A, Ocola, L, Klemens, F, Felker, JA, Biddick, C, Kraus, JS, Blakey, M, Orphanos, P, Layadi, N & Merchant, S 1999, 'Alignment mark detection in CMOS materials with SCALPEL e-beam lithography', Proceedings of SPIE - The International Society for Optical Engineering, vol. 3676, no. I, pp. 217-226. https://doi.org/10.1117/12.351093

TY - JOUR

T1 - Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

AU - Farrow, Reginald C.

AU - Waskiewicz, Warren K.

AU - Kizilyalli, Isik

AU - Gallatin, Gregg

AU - Liddle, J. Alexander

AU - Mkrtchyan, Masis

AU - Kornblit, Avi

AU - Ocola, Leonidas

AU - Klemens, Fred

AU - Felker, Joseph A.

AU - Biddick, Christopher

AU - Kraus, Joseph S.

AU - Blakey, Myrtle

AU - Orphanos, Paul

AU - Layadi, Nace

AU - Merchant, Sailesh

PY - 1999

Y1 - 1999

N2 - A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 μm line-space patterns yielded mark positions that were repeatable within 20 nm 3σ with a dose of 4 μC/cm2 and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.

AB - A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 μm line-space patterns yielded mark positions that were repeatable within 20 nm 3σ with a dose of 4 μC/cm2 and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 μm while maintaining 36 nm 3σ precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.

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U2 - 10.1117/12.351093

DO - 10.1117/12.351093

M3 - Conference article

AN - SCOPUS:0032671533

SN - 0277-786X

VL - 3676

SP - 217

EP - 226

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - I

T2 - Proceedings of the 1999 Emerging Lithographic Technologies III

Y2 - 15 March 1999 through 17 March 1999

ER -

Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Abstract

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