Abstract
The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.
Original language | English (US) |
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Pages | 712-713 |
Number of pages | 2 |
State | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994 |
Other
Other | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America |
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City | New Orleans, LA, USA |
Period | 7/31/94 → 8/5/94 |
All Science Journal Classification (ASJC) codes
- General Engineering