Alignment mark materials for projection electron lithography

R. C. Farrow; J. A. Liddle; S. D. Berger; H. A. Huggins; J. S. Kraus; R. M. Camarda; R. G. Tarascon; L. Fetter

Alignment mark materials for projection electron lithography

R. C. Farrow
, J. A. Liddle
, S. D. Berger
, H. A. Huggins
, J. S. Kraus
, R. M. Camarda
, R. G. Tarascon
, L. Fetter

Research output: Contribution to conference › Paper › peer-review

Abstract

The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

Original language	English (US)
Pages	712-713
Number of pages	2
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994

Other

Other	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America
City	New Orleans, LA, USA
Period	7/31/94 → 8/5/94

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{0190ac7d8cc24fe480b54c1be3bddf01,

title = "Alignment mark materials for projection electron lithography",

abstract = "The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.",

author = "Farrow, \{R. C.\} and Liddle, \{J. A.\} and Berger, \{S. D.\} and Huggins, \{H. A.\} and Kraus, \{J. S.\} and Camarda, \{R. M.\} and Tarascon, \{R. G.\} and L. Fetter",

year = "1994",

language = "English (US)",

pages = "712--713",

note = "Proceedings of the 52nd Annual Meeting of the Microscopy Society of America ; Conference date: 31-07-1994 Through 05-08-1994",

}

TY - CONF

T1 - Alignment mark materials for projection electron lithography

AU - Farrow, R. C.

AU - Liddle, J. A.

AU - Berger, S. D.

AU - Huggins, H. A.

AU - Kraus, J. S.

AU - Camarda, R. M.

AU - Tarascon, R. G.

AU - Fetter, L.

PY - 1994

Y1 - 1994

N2 - The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

AB - The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

UR - https://www.scopus.com/pages/publications/0028737384

UR - https://www.scopus.com/pages/publications/0028737384#tab=citedBy

M3 - Paper

AN - SCOPUS:0028737384

SP - 712

EP - 713

T2 - Proceedings of the 52nd Annual Meeting of the Microscopy Society of America

Y2 - 31 July 1994 through 5 August 1994

ER -

Alignment mark materials for projection electron lithography

Abstract

Other

All Science Journal Classification (ASJC) codes

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Cite this