Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes

S. M. Sadaf, Y. H. Ra, H. P.T. Nguyen, M. Djavid, Z. Mi

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

Original languageEnglish (US)
Pages (from-to)6696-6701
Number of pages6
JournalNano Letters
Volume15
Issue number10
DOIs
StatePublished - Oct 14 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • AC LED
  • GaN
  • Nanowire
  • light emitting diode
  • quantum dot
  • tunnel junction

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