@inproceedings{bca099c9cd0a4425826f4676ca2c0b81,
title = "Ambient temperature and layout impact on self-heating characterization in FinFET devices",
abstract = "Self-Heating effects are going to be of increasing significance in future nodes. Understanding self-heating measurement results and its accuracy is of vital importance. In this paper we show for the first time through measurement that the ambient temperature can affect self-heating measurement by up to 70%. Through a series of measurements at different temperatures and dissipated power, we show that the Si fin has a more dominant effect in heat transport and its varying thermal conductivity should be taken into account.",
keywords = "advanced technology, ambient temperature, heat sensor, reliability, self-heating",
author = "P. Paliwoda and Z. Chbili and A. Kerber and D. Singh and D. Misra",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353640",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6E.21--6E.25",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
}