Ambient temperature and layout impact on self-heating characterization in FinFET devices

P. Paliwoda, Z. Chbili, A. Kerber, D. Singh, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Self-Heating effects are going to be of increasing significance in future nodes. Understanding self-heating measurement results and its accuracy is of vital importance. In this paper we show for the first time through measurement that the ambient temperature can affect self-heating measurement by up to 70%. Through a series of measurements at different temperatures and dissipated power, we show that the Si fin has a more dominant effect in heat transport and its varying thermal conductivity should be taken into account.

Original languageEnglish (US)
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6E.21-6E.25
Volume2018-March
ISBN (Electronic)9781538654798
DOIs
StatePublished - May 25 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: Mar 11 2018Mar 15 2018

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/TerritoryUnited States
CityBurlingame
Period3/11/183/15/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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